thermal-overload release

Through changing structure of heating element near interface of solid and liquid, increasing thermal release at specific direction, enlarging area in which temperature gradient is linear, Φ 2 ″ HB-GaAs single crystal with inversely deviating seed was grown successfully.

通过改变固液截面附近的加热元件结构，在特定方向加强了散热，延伸了温度梯度的线性范围，使用反偏籽晶，成功地生长了Φ2〃HB GaAs单晶。

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Studied on the Thermal Release Behavior of Heat-resistant Particulate flavors

耐高温颗粒香精的热释放行为研究

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Through the thermal release device converts the capturing energy center of the optical signals into electrical signals and then transmits the date into a computer.

通过热释电器件把捕捉到的能量中心的光信号转换成电信号，并传入计算机。

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Thermal release behavior of hydrogen in TiH_x

TiH x中H的热释放行为研究

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Hydrogenation And Thermal Release of Hydrogen in Titanium Thin Films

钛薄膜氢化及热释放特性研究

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